Hardware Implementation of Artificial Synapses

The simple two-terminal metal-insulator-metal (MIM) structures of memristors make them capable being integrated into dense crossbar arrays [1, 2]. As shown in Figure 1, a typical array consists parallel metal lines, termed word lines and bit respectively, as the top bottom electrodes that are perpendicular to each other. bidirectional memory is connected between line line. During read process, extra current generated by natural path represented red solid can reduce energy consumption unselected unit, thus reducing mosaic limiting size array. In order independently control read/write operations unit array, 1T1R structure proposed.